LAUSR

In multiferroic GaFeO3 (GFO)-type iron oxides, spontaneous polarization and magnetization coexist at room temperature along the [001]GFO and [100]GFO directions, respectively. Due to the large magnetocrystalline anisotropy and polarization direction in GFO, controlling the domain configuration and orientation is crucial when designing the ferroelectric and ferrimagnetic properties. In this study, we fabricate Ga0.6Fe1.4O3 epitaxial thin films on various substrates to investigate the substrate effect on the structural, ferroelectric, and magnetic properties. Multiple domains and their orientations in the films can be controlled in four ways through variations in the substrate. Additionally, decreasing the number of domains reduces the leakage current, allowing ferroelectric measurements for the film at room temperature. Furthermore, tilting the easy magnetic axis from the in-plane direction causes the in-plane magnetic anisotropy of the film to vary from 1.1 × 106 to 1.8 × 105 erg/cm3 at 300 K. Domain cont...