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Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of in situ reflection high-energy… Click to show full abstract
Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of in situ reflection high-energy electron diffraction. However, establishing a stable oscillation pattern in the growth calibration of complex oxide films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.
Journal Title: Applied Physics Letters
Year Published: 2017
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