LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Photo from academic.microsoft.com

Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants for achieving semi-insulating… Click to show full abstract

Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants for achieving semi-insulating GaN, Fe, and C cause distinct properties of GaN layers since the Fermi-level is located either above (Fe) or below (C) the midgap position. In this study, precursor-based doping of GaN in metalorganic vapor phase epitaxy is used at otherwise identical growth conditions to control the dopant concentrations in the layer. Using electric force microscopy, we have investigated the contact potentials of Fe- and C-doped samples with respect to a cobalt metal probe tip in dependence of on the dopant concentration. While in Fe-doped samples the sign of the contact potential is constant, a change from positive to negative contact potential values is observed at high carbon concentrations, indicating the shift of the Fermi-level below the midgap position. In vertical transport measurements, C-doped G...

Keywords: carbon; gan layers; currents fermi; level shifts; leakage currents; fermi level

Journal Title: Journal of Applied Physics
Year Published: 2017

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.