LAUSR

Strong near-infrared luminescence under ultraviolet excitation was obtained in epitaxially grown BaSnO3 perovskite films. The films were grown on SrTiO3 (001) substrates by pulsed-laser deposition, and the crystallinity of the epitaxial growth was confirmed by X-ray diffraction and reflected high-energy electron diffraction. Near-infrared luminescence of the as-grown film showed a broad emission peak centered at 905 nm. The transparencies of the double-side-polished substrate with and without the film were about 70% at around 550 nm, suggesting that the transparency of the film itself is close to 100%. The preparation of epitaxial thin films with a strong near-infrared luminescence and a high transparency may open up applications for wavelength conversion in solar cells for realizing a higher efficiency.