LAUSR

Doped HfO2 has become a promising candidate for non-volatile memory devices since it can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have been investigated for the stabilization of ferroelectric HfO2. Here, we report the fabrication of capacitors comprising ferroelectric HfO2 metal-insulator-metal structures with TiN bottom and top electrodes using the dopant Lu. Amorphous 5% Lu doped HfO2 was deposited by pulsed laser deposition and afterwards annealed to achieve the ferroelectric, orthorhombic phase (space group Pbc21). The polarization of the layers was confirmed by capacitance-voltage, polarization-voltage, and current-voltage measurements. Depending on the anneal temperature, the remanent polarization changes and the initial state of the oxide varies. The layer exhibits initially a pinched hysteresis up to an annealing temperature of 600 °C and an unpinched hysteresis at 700 °C. The maximum polarization is about 11 μC/cm2 which is measured after 104 cycles and ...