LAUSR

With the negative capacitance (NC) effect of ferroelectric materials, a sub-60-mV/decade sub-threshold slope in a conventional field-effect transistor has been theoretically and experimentally demonstrated. In order to utilize the NC for complementary metal-oxide-semiconductor logic device applications, it is necessary to closely examine various parameters for the device performance. Specifically, the analysis of effective drive current (i.e., Ieff = {IDS@[VDS = 0.5VDD, VG = VDD] + IDS@[VDS =VDD, VG = 0.5VDD]}/2) of the NC device is vital. In this work, Ieff of a NC fin field-effect transistor (FinFET), in which a baseline 70 nm FinFET is electrically integrated with a ferroelectric capacitor, is experimentally measured to explore the correlation between hysteresis and Ieff.