LAUSR

We report ultra-low voltage controlled magnetic properties in an amorphous MgO (a-MgO) thin film. The intrinsic magnetization of MgO can be decreased by about 57.5% by the application of a positive bias voltage while increased by about 56.7% by a negative bias, at an ultralow voltage of just 0.2 V. More interestingly, this ultralow voltage also induces a strong magnetic anisotropy in the a-MgO film. Further analysis indicates that the migration of O2− ions under an electric field results in a change in the Mg/O ratio and the redistribution of Mg vacancies, thus leading to the change in the magnetic properties of the film. The control of room temperature magnetic properties at ultralow voltages may find applications in multifunctional memory and ultralow-power consumption spintronics.We report ultra-low voltage controlled magnetic properties in an amorphous MgO (a-MgO) thin film. The intrinsic magnetization of MgO can be decreased by about 57.5% by the application of a positive bias voltage while increased by about 56.7% by a negative bias, at an ultralow voltage of just 0.2 V. More interestingly, this ultralow voltage also induces a strong magnetic anisotropy in the a-MgO film. Further analysis indicates that the migration of O2− ions under an electric field results in a change in the Mg/O ratio and the redistribution of Mg vacancies, thus leading to the change in the magnetic properties of the film. The control of room temperature magnetic properties at ultralow voltages may find applications in multifunctional memory and ultralow-power consumption spintronics.