LAUSR

It is generally impossible in two-terminal devices to separate the resistance of the device material from the parasitic resistance of terminals, interfaces, and serial loads, yet such information is needed to understand device physics. Here, we present an exact resistance-difference analysis, for a library of similarly configured two-terminal devices with self-similar material responses to external perturbations (electric current, temperature, and magnetic field), to obtain the relative conductivity change Δσ/σ in the device material using device-resistance data only. An outstanding example is nanometallic Mo/Si3N4:Pt/Pt resistance memory, in which electrons in Si3N4:Pt—the device material—display entirely different physics from those in the Pt and Mo electrodes. Our method unraveled their individual Δσ/σ, which for Si3N4:Pt exhibits self-similarity over different resistance states and film thicknesses.