LAUSR

Regardless of used metal contact combinations, bulk-limited electrical behaviors were observed in metal/hydrogenated diamond-like carbon (DLC)/metal (MSM) devices through the study of I-V curves and temperature dependence of conductivity. For MSM devices with DLC deposited at a substrate bias of −50 V, the I-V curves exhibited ohmic electrical behaviors in the range of 0–1 V and followed the Poole-Frenkel mechanism in the range of 1–5 V. Moreover, the carrier transport was dominated by the thermally activated process with an activation energy of 0.1576 eV in the temperature range of 160–400 K. The bulk-limited behaviors of MSM devices could be attributed to the relatively high bulk resistance of the DLC layer. This result offers the fundamental insight into DLC based electrical devices and brings forward the concept to fabricate functional carbon based materials.Regardless of used metal contact combinations, bulk-limited electrical behaviors were observed in metal/hydrogenated diamond-like carbon (DLC)/metal (MSM) devices through the study of I-V curves and temperature dependence of conductivity. For MSM devices with DLC deposited at a substrate bias of −50 V, the I-V curves exhibited ohmic electrical behaviors in the range of 0–1 V and followed the Poole-Frenkel mechanism in the range of 1–5 V. Moreover, the carrier transport was dominated by the thermally activated process with an activation energy of 0.1576 eV in the temperature range of 160–400 K. The bulk-limited behaviors of MSM devices could be attributed to the relatively high bulk resistance of the DLC layer. This result offers the fundamental insight into DLC based electrical devices and brings forward the concept to fabricate functional carbon based materials.