LAUSR

In this letter, we report a pressure sensing element based on the graphene–boron nitride (BN) heterostructure. The heterostructure consists of monolayer graphene sandwiched between two layers of vertically stacked dielectric BN nanofilms. The BN layers were used to protect the graphene layer from oxidation and pollution. Pressure tests were performed to investigate the characteristics of the BN–graphene–BN pressure sensing element. A sensitivity of 24.85 μV/V/mmHg is achieved in the pressure range of 130–180 kPa. After exposing the BN–graphene–BN pressure sensing element to the ambient environment for 7 days, the relative resistance change in the pressure sensing element is only 3.1%, while that of the reference open-faced graphene device without the BN protection layers is 15.7%. Thus, this strategy is promising for fabricating practical graphene pressure sensors with improved performance and stability.In this letter, we report a pressure sensing element based on the graphene–boron nitride (BN) heterostructure. The heterostructure consists of monolayer graphene sandwiched between two layers of vertically stacked dielectric BN nanofilms. The BN layers were used to protect the graphene layer from oxidation and pollution. Pressure tests were performed to investigate the characteristics of the BN–graphene–BN pressure sensing element. A sensitivity of 24.85 μV/V/mmHg is achieved in the pressure range of 130–180 kPa. After exposing the BN–graphene–BN pressure sensing element to the ambient environment for 7 days, the relative resistance change in the pressure sensing element is only 3.1%, while that of the reference open-faced graphene device without the BN protection layers is 15.7%. Thus, this strategy is promising for fabricating practical graphene pressure sensors with improved performance and stability.