LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Perspective: Optical measurement of feature dimensions and shapes by scatterometry

Photo by hudsoncrafted from unsplash

The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared… Click to show full abstract

The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental data from an ellipsometer. These simulations are done using the rigorous coupled wave analysis for solving Maxwell’s equations. In this article, we describe the Mueller matrix spectroscopic ellipsometry based scatterometry. Next, the rigorous coupled wave analysis for Maxwell’s equations is presented. Following this, several example measurements are described as they apply to specific process steps in the fabrication of gate-all-around (GAA) transistor structures. First, simulations of measurement sensitivity for the inner spacer etch back step of horizontal GAA transistor processing are described. Next, the simulated metrology sensitivity for sacrificial (dummy) amorphous silicon etch back step of vertical GAA transistor processing is discussed. Finally, we ...

Keywords: measurement feature; feature; gaa transistor; perspective optical; scatterometry; optical measurement

Journal Title: APL Materials
Year Published: 2018

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.