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We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density… Click to show full abstract
We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 × 109 cm Hz1/2/W at 3.81 μm.
Keywords:
inas type;
temperature operation;
type quantum;
room temperature;
quantum well
Journal Title: Applied Physics Letters
Year Published: 2018
Link to full text (if available)
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Journal Title: Applied Physics Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!