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The Aharonov-Bohm oscillation in the BiSbTe3 topological insulator macroflake

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We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the… Click to show full abstract

We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the oscillation originates from the surface state. The AB oscillation frequency increases as temperature decreases, and the corresponding phase coherence length is consistent with that extracted from the weak antilocalization. The phase coherence length is proportional to T−1∕2. The magnetoresistance ratio reaches 700% (1000%) at 9 T (14 T) and 2 K, and it is proportional to the carrier mobility. The magnetoresistance ratio is larger than all reported values in (Bi, Sb)2(Te, Se)3 topological insulators.

Keywords: aharonov bohm; oscillation; bohm oscillation; bisbte3 topological; topological insulator; oscillation bisbte3

Journal Title: Applied Physics Letters
Year Published: 2018

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