LAUSR

A significant experimental effort has been undertaken to evaluate the doping effect of La3+at Bi-site in solid solutions of BiFeO3 (BFO) and Ba0.7Sr0.3TiO3 (BST) through various techniques like x-ray diffraction, magnetic measurements, and frequency and/or temperature dependent impedance spectroscopy. The magnetic isotherm at room temperature in La doped BFO (BLFO)-BST solid solution indicates weak ferromagnetism due to improvement in the homogeneous canted spin structure. The elusive nano-sized domain structure inside the grains of 40% BST co-doped BLFO was observed by a scanning electron microscopy technique. The domains and domain boundaries are generally formed inside the grain due to strained/unstrained lattice defects and/or mismatch with the substitution of ions of different sizes at the A and B sites. An equivalent circuit model (internal barrier layer capacitor), based on domain, domain boundary, and grain boundary relaxations, has been established to justify the enhancement of the dielectric response with BST concentrations.A significant experimental effort has been undertaken to evaluate the doping effect of La3+at Bi-site in solid solutions of BiFeO3 (BFO) and Ba0.7Sr0.3TiO3 (BST) through various techniques like x-ray diffraction, magnetic measurements, and frequency and/or temperature dependent impedance spectroscopy. The magnetic isotherm at room temperature in La doped BFO (BLFO)-BST solid solution indicates weak ferromagnetism due to improvement in the homogeneous canted spin structure. The elusive nano-sized domain structure inside the grains of 40% BST co-doped BLFO was observed by a scanning electron microscopy technique. The domains and domain boundaries are generally formed inside the grain due to strained/unstrained lattice defects and/or mismatch with the substitution of ions of different sizes at the A and B sites. An equivalent circuit model (internal barrier layer capacitor), based on domain, domain boundary, and grain boundary relaxations, has been established to justify the enhancement of the dielectric res...