Photo from wikipedia
The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated… Click to show full abstract
The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.
Journal Title: Applied Physics Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!