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We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation… Click to show full abstract
We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.
Journal Title: Applied Physics Letters
Year Published: 2018
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