Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that… Click to show full abstract
Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that CsCi may occur in four configurations labeled A, B, C, and D. The C form is claimed to have the lowest energy of all four forms. Based on this, the authors suggest that the C form was misinterpreted as the B form in some experimental studies. This comment provides arguments that the conclusions of Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] do not match the well-known experimental results.Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that CsCi may occur in four configurations labeled A, B, C, and D. The C form is claimed to have the lowest energy of all four forms. Based on this, the authors suggest that the C form was misinterpreted as the B form in some experimental studies. This comment provides arguments that the conclusions of Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] do not match the well-known experimental results.
               
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