LAUSR

We review recent progress toward the development of predictive models of ion-induced pattern formation on room-temperature silicon, with a particular emphasis on efforts to eliminate fit parameters in the linear regime by means of experimental measurements or atomistic simulations. Analytical approaches considered include “mechanistic” models of the impact-induced collision cascade, the Crater Function Framework, and continuum treatments of ion-induced stress and viscous flow. Parameter evaluation methods include molecular dynamics and binary collision approximation simulations, as well as wafer curvature measurements and grazing incidence small-angle x-ray scattering. Mathematical detail is provided in the context of key results from pattern formation theory, which are also briefly summarized.We review recent progress toward the development of predictive models of ion-induced pattern formation on room-temperature silicon, with a particular emphasis on efforts to eliminate fit parameters in the linear regime by means of experimental measurements or atomistic simulations. Analytical approaches considered include “mechanistic” models of the impact-induced collision cascade, the Crater Function Framework, and continuum treatments of ion-induced stress and viscous flow. Parameter evaluation methods include molecular dynamics and binary collision approximation simulations, as well as wafer curvature measurements and grazing incidence small-angle x-ray scattering. Mathematical detail is provided in the context of key results from pattern formation theory, which are also briefly summarized.