LAUSR

An ultra-low operating voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low operating voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the operating voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low operating voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.An ultra-low operating voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low operating voltages and high cycling endurance when the compliance current (ICC) is 0.3 mA. Moreover, the operating voltage is considerably influenced by the grain size of the film. The VForming increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the ICC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low operating voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect.