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Magneto-transport and weak anti-localization in ferromagnetic semiconductor CrSiTe3 single crystal

The temperature dependence of resistance of CrSiTe3 single crystals shows a cusp below the Cure temperature, which may be attributed to the disappearance of electron scattering on magnetic fluctuation. The… Click to show full abstract

The temperature dependence of resistance of CrSiTe3 single crystals shows a cusp below the Cure temperature, which may be attributed to the disappearance of electron scattering on magnetic fluctuation. The magneto-conductance of CrSiTe3 was measured at temperatures ranging from 50 K to 30 K over the magnetic field range of 0–5 T. Magneto-transport measurements demonstrate that the low-field negative magneto-conductivity results from the weak anti-localization (WAL). The WAL effect was analyzed based on the Hikami-Larkin-Nagaoka (HLN) two-dimensional (2D) diffusive transport theory and the HLN equation could well fit the magneto-conductivity data.

Keywords: magneto transport; crsite3; weak anti; magneto; crsite3 single

Journal Title: Applied Physics Letters
Year Published: 2018

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