LAUSR

We report on the influence of growth temperature and post-growth annealing on interface formation and film structure of thin MoO 3 films on GaAs(001), which plays an important role for a future application as carrier-selective contacts or diffusion barriers in III/V-semiconductor spin- and optoelectronics or photovoltaics. Growth and post-growth annealing were performed in a manner that emulates heterostructure growth and lithographic processing. High-resolution transmission electron microscopy reveals nanocrystalline (“amorphous”) growth at temperatures up to 200 ° C and a transition to polycrystalline growth at about 400 ° C. Spatially resolved chemical analysis by energy dispersive x-ray spectroscopy reveals strong intermixing at the MoO 3/GaAs(001) interface proceeding during both film deposition and annealing. Our results evidence the important role of intermixing occurring during the process of interface formation at the very beginning of deposition.We report on the influence of growth temperature and post-growth annealing on interface formation and film structure of thin MoO 3 films on GaAs(001), which plays an important role for a future application as carrier-selective contacts or diffusion barriers in III/V-semiconductor spin- and optoelectronics or photovoltaics. Growth and post-growth annealing were performed in a manner that emulates heterostructure growth and lithographic processing. High-resolution transmission electron microscopy reveals nanocrystalline (“amorphous”) growth at temperatures up to 200 ° C and a transition to polycrystalline growth at about 400 ° C. Spatially resolved chemical analysis by energy dispersive x-ray spectroscopy reveals strong intermixing at the MoO 3/GaAs(001) interface proceeding during both film deposition and annealing. Our results evidence the important role of intermixing occurring during the process of interface formation at the very beginning of deposition.