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Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

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We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively… Click to show full abstract

We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The islands grew vertically and laterally to coalesce with each other. Facet control of the α-Ga2O3 islands was achieved by controlling the growth temperature, and inclined facets developed by decreasing the temperature. Transmission electron microscopy revealed that the crystal quality of the regrown α-Ga2O3 was improved owing to both the blocking of dislocations by the mask and the dislocation bending by the inclined facets.

Keywords: ga2o3; halide vapor; epitaxial lateral; lateral overgrowth; ga2o3 halide; overgrowth ga2o3

Journal Title: APL Materials
Year Published: 2019

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