To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate... Click to show full abstract
To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate...
               
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