LAUSR

High-performance terahertz (THz) detectors are in great need in the applications of security, medicine, as well as in astronomy. A high responsivity p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector was demonstrated for a specific frequency (5 THz) below the frequency of the Reststrahlen band. The experimental results indicate that the optimized detector shows significant enhancement of the response below the Reststrahlen band in contrast to the conventional detectors. With the bottom gold layer serving as a perfect reflector, nearly 50% increment of responsivity and quantum efficiency was obtained further due to the cavity effect. Though very simple, such reflector design shows a satisfactory effect and is easy to be realized in practical applications. The resultant peak responsivity of the detector with a bottom reflector could be as high as 6.8 A/W at 1 V bias. The noise equivalent power is 2.3 × 10 − 12 W / Hz 1 / 2. Due to the absorption ability to normal incident light and high responsivity, the p-GaAs HIWIP detector is promising for the focal plane array and large-scale pixelless imaging applications.High-performance terahertz (THz) detectors are in great need in the applications of security, medicine, as well as in astronomy. A high responsivity p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector was demonstrated for a specific frequency (5 THz) below the frequency of the Reststrahlen band. The experimental results indicate that the optimized detector shows significant enhancement of the response below the Reststrahlen band in contrast to the conventional detectors. With the bottom gold layer serving as a perfect reflector, nearly 50% increment of responsivity and quantum efficiency was obtained further due to the cavity effect. Though very simple, such reflector design shows a satisfactory effect and is easy to be realized in practical applications. The resultant peak responsivity of the detector with a bottom reflector could be as high as 6.8 A/W at 1 V bias. The noise equivalent power is 2.3 × 10 − 12 W / Hz 1 / 2. Due to the absorption ability to normal i...