Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers.… Click to show full abstract
Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum-dot micropillar is as low as 20 μW with the pillar diameter of 15 μm. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 °C.
Journal Title: AIP Advances
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!