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Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI3

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The magnetic entropy changes of ΔSM(T,H) around the magnetic transition temperature (TC) have been investigated by the scaling method in a two-dimensional ferromagnetic semiconductor (2D FS) CrI3 single crystal. The… Click to show full abstract

The magnetic entropy changes of ΔSM(T,H) around the magnetic transition temperature (TC) have been investigated by the scaling method in a two-dimensional ferromagnetic semiconductor (2D FS) CrI3 single crystal. The critical parameters based on ΔSM(T,H) have been obtained. The ΔSM(T,H) under different magnetic fields can be scaled into a single curve independent of external field and temperature. The magnetic entropy is about 3.21 J/kg K at applied magnetic field H = 4.5 T. The critical parameters n, b, and c obtained from magnetic entropy ΔSM(T,H) are about 0.62(1), 0.69(2), and 1.30(3), respectively. The value of n is close to that of the 3D Heisenberg model. The temperature dependent n at different magnetic fields scales into one universal line above TC and deviates the scaling line at low temperatures. The deviation can be attributed to the strong uniaxial anisotropy effect in CrI3. The result is helpful for understanding the origin of the magnetic phase transition in 2D FSs.

Keywords: entropy; magnetic entropy; ferromagnetic semiconductor; semiconductor cri3; two dimensional

Journal Title: Journal of Applied Physics
Year Published: 2019

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