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Effect of Charge Carrier Relaxation on Donor-Acceptor Recombination Spectra Taking into Account Coulomb Correlations

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This study presents the results of numerical simulation of donor-acceptor recombination spectra in compensated semiconductors taking into account electrostatic fluctuations associated with the presence of ionised impurities. The presence of… Click to show full abstract

This study presents the results of numerical simulation of donor-acceptor recombination spectra in compensated semiconductors taking into account electrostatic fluctuations associated with the presence of ionised impurities. The presence of Coulomb correlations in a system of partially ionised impurity centers results in distinctive features appearing in recombination spectra, depending on charge-carrier energy relaxation. The authors have considered the following limiting cases: absence of relaxation, partial relaxation of majority and minority charge carriers, as well as complete relaxation of a system of electrons and holes localized on impurities. The results obtained through numerical simulation have been interpreted using a previously developed analytical model, in which contributions to recombination from equilibrium and photoexcited charge carriers are considered separately. It has been shown that, under certain experimental conditions, emission lines corresponding to these contributions can be spectrally resolved.This study presents the results of numerical simulation of donor-acceptor recombination spectra in compensated semiconductors taking into account electrostatic fluctuations associated with the presence of ionised impurities. The presence of Coulomb correlations in a system of partially ionised impurity centers results in distinctive features appearing in recombination spectra, depending on charge-carrier energy relaxation. The authors have considered the following limiting cases: absence of relaxation, partial relaxation of majority and minority charge carriers, as well as complete relaxation of a system of electrons and holes localized on impurities. The results obtained through numerical simulation have been interpreted using a previously developed analytical model, in which contributions to recombination from equilibrium and photoexcited charge carriers are considered separately. It has been shown that, under certain experimental conditions, emission lines corresponding to these contributions can be sp...

Keywords: charge; donor acceptor; relaxation; recombination spectra

Journal Title: Low Temperature Physics
Year Published: 2019

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