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Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of down to 6 nm. The hole m... Click to show full abstract
Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of down to 6 nm. The hole m...
Keywords:
channel metal;
germanium insulator;
oxide semiconductor;
metal oxide;
junctionless germanium;
channel
Journal Title: Applied Physics Letters
Year Published: 2019
Link to full text (if available)
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Journal Title: Applied Physics Letters
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!