M-type bismuth doped strontium hexaferrite Sr1 − xBixFe12O19 (x = 0, 0.01, and 0.02) is prepared by the sol-gel auto-combustion method and studied for magnetoelectricity. The lattice of the x = 0.01 sample is found to… Click to show full abstract
M-type bismuth doped strontium hexaferrite Sr1 − xBixFe12O19 (x = 0, 0.01, and 0.02) is prepared by the sol-gel auto-combustion method and studied for magnetoelectricity. The lattice of the x = 0.01 sample is found to be highly strained compared to the other two compositions. The enhancement of strain is also accompanied by an increase in magnetization by 6%. Impedance and modulus spectroscopy studies suggest a transition in relaxation mechanism from grain dominated (below 150 K) to grain boundary dominated (above 150 K). The grain related capacitance for x = 0.01 is found to be ∼50 nF, and this value is ∼10 times higher than the other two samples. The linear magnetoelectric coefficient α d (in mV c m − 1 O e − 1) for the parent x = 0 sample is found to be 0.33 at 125 K, and this value decreases gradually to 0.27 at 300 K. The x = 0.01 sample displayed the highest (even 10% higher than the x = 0 sample) value of α d at low temperature. Unfortunately, the increased value of α d is also accompanied by a drastic reduction in its magnitude for temperatures higher than 200 K, due to the increased electrical conduction which in x = 0.01 is ∼94% higher than the parent.M-type bismuth doped strontium hexaferrite Sr1 − xBixFe12O19 (x = 0, 0.01, and 0.02) is prepared by the sol-gel auto-combustion method and studied for magnetoelectricity. The lattice of the x = 0.01 sample is found to be highly strained compared to the other two compositions. The enhancement of strain is also accompanied by an increase in magnetization by 6%. Impedance and modulus spectroscopy studies suggest a transition in relaxation mechanism from grain dominated (below 150 K) to grain boundary dominated (above 150 K). The grain related capacitance for x = 0.01 is found to be ∼50 nF, and this value is ∼10 times higher than the other two samples. The linear magnetoelectric coefficient α d (in mV c m − 1 O e − 1) for the parent x = 0 sample is found to be 0.33 at 125 K, and this value decreases gradually to 0.27 at 300 K. The x = 0.01 sample displayed the highest (even 10% higher than the x = 0 sample) value of α d at low temperature. Unfortunately, the increased value of α d i...
               
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