LAUSR

Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with sub-nanometer resolution. Here we present a novel method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than $2.5 \cdot 10^{-4}$ and an accuracy of $1.5 \cdot 10^{-3}$, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.