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We have grown structurally high-quality GaN with a low residual shallow donor concentration ( Click to show full abstract
We have grown structurally high-quality GaN with a low residual shallow donor concentration (<5 × 1015 cm−3) through pulsed sputtering. Light Si doping to this film with a Si concentration of 2 × 1...
Keywords:
pulsed sputtering;
lightly doped;
doped lightly;
doped gan;
unintentionally doped;
characteristics unintentionally
Journal Title: AIP Advances
Year Published: 2019
Link to full text (if available)
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Journal Title: AIP Advances
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!