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Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and therma... Click to show full abstract
Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and therma...
Keywords:
epitaxial growth;
aln nucleation;
layers sic;
growth aln;
nucleation layers;
transmorphic epitaxial
Journal Title: Applied Physics Letters
Year Published: 2019
Link to full text (if available)
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Journal Title: Applied Physics Letters
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!