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Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices

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We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high ... Click to show full abstract

We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high ...

Keywords: antiphase; boundaries epitaxial; engineering antiphase; antiphase boundaries; epitaxial srtio3

Journal Title: APL Materials
Year Published: 2019

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