Using X-ray luminescence spectra, the enhancement of both σ-luminescence of self-trapped excitons and Ех luminescence (band maxima at 3.89 and 3.1 eV, respectively) has been revealed for the first time in… Click to show full abstract
Using X-ray luminescence spectra, the enhancement of both σ-luminescence of self-trapped excitons and Ех luminescence (band maxima at 3.89 and 3.1 eV, respectively) has been revealed for the first time in RbI single crystals exposed to elastic uniaxial stress at 93 K. The intensity of these emissions increases linearly with the relative degree of applied uniaxial deformation of the crystal up to ɛ = 1%, while the luminescence undergoes saturation at higher values of ɛ. The behavior of the I = f (ɛ) dependence for σ and Ех emissions suggests that Ех luminescence is intrinsic, and is connected with the radiative relaxation of self-trapped excitons in the field of local deformation of a RbI regular lattice.Using X-ray luminescence spectra, the enhancement of both σ-luminescence of self-trapped excitons and Ех luminescence (band maxima at 3.89 and 3.1 eV, respectively) has been revealed for the first time in RbI single crystals exposed to elastic uniaxial stress at 93 K. The intensity of these emissions increases linearly with the relative degree of applied uniaxial deformation of the crystal up to ɛ = 1%, while the luminescence undergoes saturation at higher values of ɛ. The behavior of the I = f (ɛ) dependence for σ and Ех emissions suggests that Ех luminescence is intrinsic, and is connected with the radiative relaxation of self-trapped excitons in the field of local deformation of a RbI regular lattice.
               
Click one of the above tabs to view related content.