LAUSR

We present an analytical model describing misfit stresses relaxation in semipolar III-nitride heterostructures caused by misfit dislocations (MDs) originating from basal or prismatic slip and by sessile MDs. We analyze the critical thickness hc for the formation of MDs depending on crystal lattice mismatch and orientation of the semipolar growth plane. We explore transversely isotropic elasticity solutions to describe the relaxation processes in III-nitride semipolar heterostructures and compare the results for hc with those calculated within the isotropic elasticity approach. We find that the value of angle ϑ between the polar с-axis, and the direction of heterostructure growth has an impact on the realization of the stress relaxation mechanism by the generation of MDs originating either from basal or prismatic slip. A comparison of theoretical calculations with experimental data on the observation of MDs in the III-nitride heterostructures is provided.We present an analytical model describing misfit stresses relaxation in semipolar III-nitride heterostructures caused by misfit dislocations (MDs) originating from basal or prismatic slip and by sessile MDs. We analyze the critical thickness hc for the formation of MDs depending on crystal lattice mismatch and orientation of the semipolar growth plane. We explore transversely isotropic elasticity solutions to describe the relaxation processes in III-nitride semipolar heterostructures and compare the results for hc with those calculated within the isotropic elasticity approach. We find that the value of angle ϑ between the polar с-axis, and the direction of heterostructure growth has an impact on the realization of the stress relaxation mechanism by the generation of MDs originating either from basal or prismatic slip. A comparison of theoretical calculations with experimental data on the observation of MDs in the III-nitride heterostructures is provided.