LAUSR

We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature and substrate dependence of the size distributions of droplets and QDs, as well as the relative roles of Ga/N diffusivity and GaN nucleation rates on QD formation. We report on two competing mechanisms mediated by Ga surface diffusion, namely QD formation at or away from pre-existing Ga droplets. We discuss the relative roles of nucleation and coarsening dominant growth, as well as the polytype selection, on various substrates. The new insights provide an opportunity for tailoring QD size and polytype distributions for a wide range of III-N semiconductor QDs.