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We studied the charge scattering mechanisms present in In0.2Al0.8Sb/InAs/Al0.8Ga0.2Sb wells placed in close proximity to the surface of the heterostructures, at depths from 7 nm to 15 nm. The heter... Click to show full abstract
We studied the charge scattering mechanisms present in In0.2Al0.8Sb/InAs/Al0.8Ga0.2Sb wells placed in close proximity to the surface of the heterostructures, at depths from 7 nm to 15 nm. The heter...
Keywords:
scattering mechanisms;
charge scattering;
inas quantum;
mechanisms shallow;
quantum wells;
shallow inas
Journal Title: Journal of Applied Physics
Year Published: 2020
Link to full text (if available)
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Journal Title: Journal of Applied Physics
Year Published: 2020
Link to full text (if available)
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recommendations!