LAUSR

The concentration dependences of the Hall coefficient, electrical conductivity, and charge carrier mobility in CexSn1–xSe (х ≤ 0.02) are studied over a temperature range of 77–400 K. In the considered samples, impurities are compensated with intrinsic defects. As the cerium concentration increases (x = 0.01; 0.015), the concentration of donor impurities grows, and a change in the type of conductivity is observed.The concentration dependences of the Hall coefficient, electrical conductivity, and charge carrier mobility in CexSn1–xSe (х ≤ 0.02) are studied over a temperature range of 77–400 K. In the considered samples, impurities are compensated with intrinsic defects. As the cerium concentration increases (x = 0.01; 0.015), the concentration of donor impurities grows, and a change in the type of conductivity is observed.