LAUSR

Using the models of elastic and dielectric continuum, the system of differential equations is obtained, the exact analytical solutions of which describe the elastic displacement of the medium for nitride-based semiconductor nanostructure and the piezoelectric effect, which is caused by shear acoustic phonons. The theory of the shear acoustic phonons spectrum caused by the piezoelectric potential was developed. It is shown that shear acoustic phonons do not interact with electrons due to the deformation potential, but such interaction can occur due to the piezoelectric potential. Using the method of temperature Green’s functions and Dyson equation, expressions that describe the temperature dependences of the electronic level shifts and their decay rates are obtained. Calculations of the spectra of electrons, acoustic phonons, and characteristics that determine their interaction at different temperatures were carried out using the example of physical and geometric parameters of typical AlN/GaN nanostructure, which can function as an element of a separate cascade of a quantum cascade laser or detector.