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Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

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We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ)… Click to show full abstract

We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibility between the Fe-based MTJ and SrTiO3.

Keywords: epitaxial double; doped srtio3; double barrier; fully epitaxial; tunnel magnetoresistance; large tunnel

Journal Title: AIP Advances
Year Published: 2020

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