LAUSR

Although deforming a silicon single crystal at a temperature of about 600 °C lower than its melting point (1414 °C) by direct electrical heating was successfully demonstrated, the mechanism has still not been fully clarified. In this paper, we propose a model for the low temperature deformation of a semiconductor single crystal by direct electrical heating. The thermographic observation during direct electrical heating reveals that the local temperature is higher at the region where dense dislocation occurred in the semiconductor single crystal by uniaxial pressing. This is interpreted in terms of the scattering of an electron by the dislocation leading to an increase in the electrical resistivity. Finally, the deformation temperature of the semiconductor single crystal apparently becomes low due to the occurrence of such hot spots. We have also demonstrated an application to mold a microlens array composed of a germanium single crystal with a focal length of 25 µm.