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We report the observation at low temperature of a hump in the linear transfer characteristic of a thin film fully depleted silicon-on-insulator transistor when a positive bias is applied on… Click to show full abstract
We report the observation at low temperature of a hump in the linear transfer characteristic of a thin film fully depleted silicon-on-insulator transistor when a positive bias is applied on the back gate under the buried oxide. This decrease in the current is correlated with the transition from one-subband to two-subband conduction. Electron mobility measurements and calculations are in good agreement with the occurrence of intersubband scattering in carrier transport in the two-dimensional inversion layer.
Keywords:
film fully;
silicon insulator;
thin film;
fully depleted;
intersubband scattering;
depleted silicon
Journal Title: Applied Physics Letters
Year Published: 2020
Link to full text (if available)
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Journal Title: Applied Physics Letters
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!