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We consider the possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers at room temperature. Sufficient generation efficiency is achieved via the resonant increase… Click to show full abstract
We consider the possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers at room temperature. Sufficient generation efficiency is achieved via the resonant increase of GaAs second order nonlinear susceptibility in this spectral range. The outcoupling power conversion efficiency is anticipated to be up to 4 × 10−7 W−1 in the laser design studied.
Keywords:
frequency generation;
possibility difference;
gaas;
generation;
difference frequency;
generation gaas
Journal Title: Journal of Applied Physics
Year Published: 2020
Link to full text (if available)
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Journal Title: Journal of Applied Physics
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!