LAUSR

Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo-structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2 (FGT)/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I–V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be ∼0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance. Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials.