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In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is… Click to show full abstract
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature during ALD or post-deposition annealing exceeds its respective critical temperatures, even though the HfO2/SiO2 stack structure is maintained. We found a correlation between Ti suboxide formation and IDM loss and speculated the effect of impurities and defects introduced during the ALD process on IDM operation.
Journal Title: AIP Advances
Year Published: 2020
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