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Modification of the hetero-junction interface in Cd-free and all-dry process Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells by introducing the aging process for the bare CIGSSe films is demonstrated, ultimately achieving the highest… Click to show full abstract
Modification of the hetero-junction interface in Cd-free and all-dry process Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells by introducing the aging process for the bare CIGSSe films is demonstrated, ultimately achieving the highest conversion efficiency of 22.0%. In this article, two positive effects of the aging process are discussed. First, additional phases, such as Inx(O,S)y and Cu-deficient phases, are naturally formed on the CIGSSe surface. Second, unintentional segregation of Zn-rich particles at the (Zn,Mg)O/CIGSSe interface during the (Zn,Mg)O deposition is suppressed. These effects lead to the reduction of recombination at the hetero-junction interface and dramatic enhancement of performance for the Cd-free and all-dry process CIGSSe solar cells.
Journal Title: Applied Physics Letters
Year Published: 2020
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