The interaction between the itinerant carriers, lattice dynamics, and defects is a problem of long-standing fundamental interest for developing quantum theory of transport. Here, we study this interaction in the… Click to show full abstract
The interaction between the itinerant carriers, lattice dynamics, and defects is a problem of long-standing fundamental interest for developing quantum theory of transport. Here, we study this interaction in the compositionally and strain-graded AlGaN heterostructures grown on AlN substrates. The results provide direct evidence that a dimensional crossover (2D–3D) occurs with increasing temperature as the dephasing scattering events reduce the coherence length. These heterostructures show a robust polarization-induced 3D electron gas and a metallic-like behavior down to liquid helium temperature. Using magnetoresistance measurements, we analyze the evolution of the interaction between charge carriers, lattice dynamics, and defects as a function of temperature. A negative longitudinal magnetoresistance emerges at low temperatures, in line with the theory of weak localization. A weak localization fit to near zero-field magneto-conductance indicates a coherence length that is larger than the elastic mean free path and film thickness ( l φ > t > l e l), suggesting a 2D weak localization in a three-dimensional electron gas. Our observations allow for a clear and detailed picture of two distinct localization mechanisms that affect carrier transport at low temperature.
               
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