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Young's modulus and corresponding orientation in β-Ga2O3 thin films resolved by nanomechanical resonators

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We report on the non-destructive measurement of Young’s modulus of thin-film single crystal beta gallium oxide (β-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies.… Click to show full abstract

We report on the non-destructive measurement of Young’s modulus of thin-film single crystal beta gallium oxide (β-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract Young’s modulus in (100) plane, EY,(100) = 261.4±20.6 GPa, for β-Ga2O3 nanoflakes synthesized by low-pressure chemical vapor deposition (LPCVD), and Young’s modulus in [010] direction, EY,[010] = 245.8±9.2 GPa, for β-Ga2O3 nanobelts mechanically cleaved from bulk β-Ga2O3 crystal grown by edgedefined film-fed growth (EFG) method. The Young’s moduli extracted directly on nanomechanical resonant device platforms are comparable to theoretical values from firstprinciple calculations and experimentally extracted values from bulk crystal. This study yields important quantitative nanomechanical properties of β-Ga2O3 crystals, and helps pave the way for further engineering of β-Ga2O3 micro/nanoelectromechanical systems (M/NEMS) and transducers.

Keywords: corresponding orientation; ga2o3; young modulus; orientation ga2o3; modulus corresponding; ga2o3 thin

Journal Title: Applied Physics Letters
Year Published: 2021

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