LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

A two-terminal spin valve device controlled by spin–orbit torques with enhanced giant magnetoresistance

Photo from wikipedia

We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of… Click to show full abstract

We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and Co layers separated by a Pt or Cu spacer. Current injection through such layers exerts spin-orbit torques and switches the magnetization of the Co layer while the TbCo magnetization remains fixed. Subsequent current injection of lower amplitude senses the relative orientation of the magnetization of the Co and TbCo layers, which results in two distinct resistance levels for parallel and antiparallel alignment due to the currentin-plane giant magnetoresistance effect. We further show that the giant magnetoresistance of devices including a single TbCo/spacer/Co trilayer can be improved from 0.02% to 6% by using a Cu spacer instead of Pt. This type of devices offers an alternative route to a two terminal spintronic memory that can be fabricated with moderate effort.

Keywords: orbit torques; magnetoresistance; giant magnetoresistance; spin orbit; device

Journal Title: Applied Physics Letters
Year Published: 2021

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.