LAUSR

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore we provide a personal outlook on the next frontiers in this fast evolving field.